• Commissioned August 1990
• Gaussian beam step and exposure writing strategy
• LaB6 filament and 20kV, 50kV and 100kV operation
• 10 MHz pattern processor
• writing field size 560 x 560 µm at 100kV and 800µmx800µm at 50 kV
• a range of substrate types up to 150 mm in size
• multi substrate load lock
• high resolution performance with minimum spot size of 12 nm at 100 kV
• measurement resolution 5 nm ( lambda / 120)